TTC009 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Epitaxial Type

TOSHIBA Transistor Silicon NPN Epitaxial Type
TTC009
○ Power Amplifier Applications
○ Power Switching Applications
TTC009
Unit: mm
• Low collector-emitter saturation voltage: V_{CE (sat)} = 0.5 V (max)（I_C = 1A）
• High-speed switching: t_stg = 0.4 μs (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
DC
Pulse
Tc=25°C
Ta=25°C
V_CBO
V_CEX
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
160
V
160
V
80
V
7
V
3
A
5
A
1
A
15
W
2
150
°C
−55 to 150
°C
JEDEC
－
JEITA
SC-67
TOSHIBA
2-10R1A
Weight:1.7g(typ.)
Note1: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-07-07