TTC007 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type

TOSHIBA Transistor Silicon NPN Epitaxial Type
TTC007
High-Speed Switching Applications
DC-DC Converter Applications
• High DC current gain: h_FE = 400 to1000 (I_C = 0.1 A)
• Low collector-emitter saturation voltage: V_CE(sat) = 0.12 V (max)
• High-speed switching : t_f = 85 ns (typ.)
TTC007
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
100
V
Collector-emitter voltage
V_CEO
50
V
Emitter-base voltage
V_EBO
7
V
Collector current
DC
I_C
Pulse
I_CP
1
A
2
1. BASE
2. EMITTER
3. COLLECTOR
Base current
I_B
0.1
A
t = 10 s
P_C
Collector power dissipation
1.1
W
DC
(Note 1)
0.7
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
−55 to 150
°C
JEDEC
－
JEITA
－
TOSHIBA
2-3S1C
Weight: 0.01 g (typ.)
Note1: Mounted on FR4 board (glass epoxy; 645 mm²,1.6 mm thick; Cu area: 645 mm²)
Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-02-08