TTB001 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon PNP Diffused Type

TOSHIBA Transistor Silicon PNP Diffused Type
TTB001
○ Audio Frequency Power Amplifier Application
• Low collector saturation voltage : V_{CE (sat)} = −1.7 V (max)
• High power dissipation
: P_C = 36 W (Tc = 25°C)
TTB001
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
-60
V
Collector-emitter voltage
V_CEO
-60
V
Emitter-base voltage
V_EBO
-7
V
DC
I_C
-3
A
Collector current (Note1)
Pulse
I_CP
-6
A
Base current
I_B
-0.5
A
Collector power dissipation Tc = 25°C
P_C
36
W
Junction temperature (Note 2)
T_j
175
°C
Storage temperature range (Note 2)
T_stg
-55 to 175
°C
1. Base
2. N.C.
3. Emitter
4. Collector (heat sink)
JEDEC
⎯
JEITA
⎯
Note 1: Ensure that the junction temperature does not exceed 175°C
during use of the device.
TOSHIBA
2-9F1D
Weight: 1.4 g (typ.)
Note 2: Junction temperature is guaranteed up to 175°C based on AEC
Q101.
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-09-17