TTA007 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon PNP Epitaxial Type

TOSHIBA Transistor Silicon PNP Epitaxial Type
TTA007
TTA007
High-Speed Switching Applications
DC-DC Converter Applications
Unit: mm
• High DC current gain : h_FE = 200 to 500 (I_C = −0.1 A)
• Low collector-emitter saturation voltage : V_CE(sat) = −0.2 V (max)
• High-speed switching : t_f = 70 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−50
V
Collector-emitter voltage
V_CEO
−50
V
Emitter-base voltage
V_EBO
−7
V
Collector current
DC
I_C
Pulse
I_CP
−1
A
−2
Base current
I_B
−0.1
A
t = 10 s
P_C
Collector power dissipation
1.1
W
DC
(Note 1)
0.7
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
−55 to150
°C
Note1: Mounted on FR4 board (glass epoxy; 645 mm²,1.6 mm thick;
Cu area: 645 mm²)
1. BASE
2. EMITTER
3. COLLECTOR
JEDEC
－
JEITA
－
TOSHIBA
2-3S1C
Weight: 0.01 g (typ.)
Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-02-08