TTA0001 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Transistor Silicon PNP Triple Diffused Type

TOSHIBA Transistor Silicon PNP Triple Diffused Type
TTA0001
○ Power Amplifier Applications
• High collector voltage: V_CEO = －160 V (min.)
• Complementary to TTC0001
• Recommended for 100-W high-fidelity audio frequency amplifier output
stage.
TTA0001
Unit: mm
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
DC
Pulse
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
-160
V
-160
V
-5
V
-18
A
-35
A
-9
A
150
W
150
°C
−55 to 150
°C
1.BASE
2.COLLECTOR(HEAT SINK)
3.EMITTER
JEDEC
―
JEITA
―
TOSHIBA
2-16C1A
Weight : 4.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2009-06-11