TRS8E65C Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – SiC Schottky Barrier Diode

SiC Schottky Barrier Diode
TRS8E65C
1. Applications
• Power Factor Correction
• Solar Inverters
• Uninterruptible Power Supplies
• DC-DC Converters
2. Features
(1) Forward DC current: I_F(DC) = 8 A
(2) Repetitive peak reverse voltage: V_RRM = 650 V
3. Packaging and Internal Circuit
TRS8E65C
1: Cathode
2: Anode
TO-220-2L
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T_a = 25 )
Characteristics
Symbol Note
Rating
Unit
Repetitive peak reverse voltage
Forward DC current
Forward pulse current
I²t limit value
Junction temperature
Storage temperature
Mounting torque
V_RRM
I_F(DC)
I_FP
I²t
T_j
T_stg
TOR
(Note 1)
(Note 2)
650
8
90
8.0
175
-55 to 175
0.6
V
A
A²s

Nm
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: t = 100µs
Note 2: f = 50 Hz
Start of commercial production
2013-07
1
2014-03-17
Rev.3.0