TPS622 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Planar

TOSHIBA Phototransistor Silicon NPN Epitaxial Planar
TPS622(F)
Lead(Pb)-Free
Opto-electronic Switch
Optical Mouse
Optical Touch Switch
TPS622(F)
Unit in : mm
• Compact side view epoxy resin package
• High response speed: t_r, t_f = 6μs (typ.)
• Half value angle: θ1/2 = ±15° (typ.)
• Visible light cut type (black package)
• Optimum in combination with infrared LED TLN117(F) with
identical external dimensions.
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector−emitter voltage
Emitter−collector voltage
Collector current
Collector power dissipation
Collector power dissipation derating
(Ta > 25°C)
V_CEO
V_ECO
I_C
P_C
ΔP_C / °C
30
V
5
V
50
mA
75
mW
TOSHIBA
0 – 3G1
−1
mW / °C
Weight: 0.1 g (typ.)
Operating temperature range
Storage temperature range
Soldering temperature (5s)
T_opr
−25~85
°C
T_stg
−40~100
°C
T_sol
260 (Note 1)
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Soldering portion of lead: At least 2mm from the body of the device.
Opto-electrical Characteristics (Ta = 25°C)
Characteristic
Dark current
Light current
Collector−emitter saturation
voltage
Peak sensitivity wavelength
Half value angle
Switching time
Rise time
Fall time
Symbol
Test Condition
Min. Typ. Max. Unit
I_D(I_CEO) V_CE = 24V, E = 0
⎯ 0.005 0.1
μA
I_L
E = 0.1mW / cm²,
V_CE = 3V
(Note 2,3)
27
70
⎯
μA
V_CE(sat)
E = 0.1mW / cm²,
I_L = 15μA
⎯ 0.15 0.4
V
λ_P
⎯
⎯
870
⎯
nm
θ¹
⎯
⎯
±15
⎯
°
2
t_r
V_CC = 5V, I_C = 2mA
t_f
R_L = 100Ω
⎯
6
⎯
μs
⎯
6
⎯
1
2007-10-01