TPS611_07 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Planar

TOSHIBA Phototransistor Silicon NPN Epitaxial Planar
TPS611(F)
Lead(Pb)-Free
Photoelectric Counter
Various Kinds Of Readers
Position Detection
TPS611(F)
Unit in mm
• φ5mm epoxy resin package(black)
• High sensitivity: I_L = 120μA(typ.)
• Half value angle: θ1/2 = ±8°(typ.)
• Protected from external light by black mold packaging.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector−emitter voltage
Emitter−Collector voltage
Collector current
Collector power dissipation
V_CEO
V_ECO
I_C
P_C
30
V
5
V
50
mA
150
mW
Collector power dissipation
derating(Ta>25°C)
ΔP_C /°C
−2
mW/°C
Operating temperature range
Storage temperature range
T_opr
−20~75
°C
T_stg
−30~100
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
TOSHIBA
0−5C1
Weight: 0.3 g (typ.)
Pin Connection
2
1. Emitter
2. Collector
1
Opto−electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Dark current
Light current
Collector−emitter saturation
voltage
Switching time
Rise time
Fall time
Peak sensitivity wavelength
Half value angle
I_D (I_CEO) I_F = 24V, E=0
⎯ 0.005 0.1
μA
I_L
V_CE = 3V, E=0.1mW/cm²
(Note)
30
120
⎯
μA
V_CE(_sat)
I_C = 15μA, E=0.1mW/cm²
(Note)
⎯
0.25
0.4
V
t_r
V_CC = 5V, I_C = 2mA
t_f
R_L = 100Ω
⎯
6
⎯
μs
⎯
6
⎯
λ_P
⎯
⎯
900
⎯
nm
θ¹
⎯
⎯
±8
⎯
°
2
Note: Color temperature = 2870K, standard tungsten lamp
1
2007-10-01