TPS610F_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Planar

TOSHIBA Phototransistor Silicon NPN Epitaxial Planar
TPS610(F)
Lead(Pb)-Free
Photoelectric Counter
Various Kinds Of Readers
Position Detection
TPS610(F)
Unit in mm
• φ5mm epoxy resin package
• High sensitivity: I_L = 250μA(typ.)
• Half value angle: θ1/2 = ±8° (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector−emitter voltage
Emitter−collector voltage
Collector Current
Collector power dissipation
V_CEO
V_ECO
I_C
PC
30
V
5
V
50
mA
−150
mW
Collector power dissipation
derating (Ta>25°C)
ΔP_C / °C
−2
mW / °C
Operating temperature range
Storage temperature range
T_opr
−20~75
°C
T_stg
−30~100
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
TOSHIBA
0−5C1
Weight: 0.3g (typ.)
Pin Connection
2 _{1 . Emitter}
1 ^{2 . Collector}
Opto−Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min. Typ. Max. Unit
Dark current
Light current
Collector− emitter saturation
voltage
I_D (I_CEO) V_CE = 24V, E = 0
― 0.005 0.1
μA
I_L
V_CE = 3V, E = 0.1mW / cm²
(Note)
100
250
―
μA
V_{CE (sat)}
I_C = 50μA, E = 0.1mW / cm²
(Note)
―
0.25
0.4
V
Switching time
Rise time
Fall time
t_r
V_CC = 5V, I_C = 2mA
t_f
R_L = 100Ω
―
6
―
μs
―
6
―
Peak sensitivity wavelength
λ_P
Half value angle
θ¹
2
―
―
800
―
nm
―
―
±8
―
°
Note: Color temperature = 2870K, standard tungsten lamp
1
2007-10-01