TPN4R203NC Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – MOSFETs Silicon N-channel MOS (U-MOS)

MOSFETs Silicon N-channel MOS (U-MOS)
TPN4R203NC
1. Applications
• Lithium-Ion Secondary Batteries
• Power Management Switches
2. Features
(1) Small, thin package
(2) Low drain-source on-resistance: R_DS(ON) = 3.5 mΩ (typ.) (V_GS = 10 V)
(3) Low leakage current: I_DSS = 10 µA (max) (V_DS = 30 V)
(4) Enhancement mode: V_th = 1.3 to 2.3 V (V_DS = 10 V, I_D = 0.2 mA)
3. Packaging and Internal Circuit
TPN4R203NC
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
TSON Advance
4. Absolute Maximum Ratings (Note) (T_a = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulsed)
Power dissipation
Power dissipation
Power dissipation
Single-pulse avalanche energy
Avalanche current
Channel temperature
Storage temperature
(Silicon limit)
(1 ms)
(T_c = 25)
(t = 10 s)
(t = 10 s)
(Note 1), (Note 2)
(Note 1)
(Note 1)
(Note 3)
(Note 4)
(Note 5)
V_DSS
V_GSS
I_D
I_D
I_DP
P_D
P_D
P_D
E_AS
I_AR
T_ch
T_stg
30
V
±20
53
A
23
146
22
W
1.9
0.7
62
mJ
23
A
150

-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2012-09-28
Rev.1.0