TPN22006NH Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – Switching Voltage Regulators Motor Drivers DC-DC Converters

MOSFETs Silicon N-channel MOS (U-MOS-H)
TPN22006NH
1. Applications
• Switching Voltage Regulators
• Motor Drivers
• DC-DC Converters
2. Features
(1) Small footprint due to a small and thin package
(2) High-speed switching
(3) Small gate charge: Q_SW = 4.5 nC (typ.)
(4) Low drain-source on-resistance: R_DS(ON) = 18 mΩ (typ.)
(5) Low leakage current: I_DSS = 10 µA (max) (V_DS = 60 V)
(6) Enhancement mode: V_th = 2.0 to 4.0 V (V_DS = 10 V, I_D = 0.1 mA)
3. Packaging and Internal Circuit
TPN22006NH
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
TSON Advance
4. Absolute Maximum Ratings (Note) (T_a = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DSS
60
V
Gate-source voltage
V_GSS
±20
Drain current (DC)
(Silicon limit) (Note 1), (Note 2)
I_D
21
A
Drain current (DC)
(Note 1)
I_D
9
Drain current (pulsed)
(t = 1 ms)
(Note 1)
I_DP
42
Power dissipation
(T_c = 25)
P_D
18
W
Power dissipation
(t = 10 s)
(Note 3)
P_D
1.9
W
Power dissipation
(t = 10 s)
(Note 4)
P_D
0.7
W
Single-pulse avalanche energy
(Note 5)
E_AS
21
mJ
Avalanche current
I_AR
9
A
Channel temperature
T_ch
150

Storage temperature
T_stg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2012-10-18
Rev.1.0