TPM2323-60 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWER GaAs FET
TPM2323-60
FEATURES
„ HIGH POWER
P1dB=48.0dBm at 2.4GHz
„ HIGH GAIN
G1dB=10.0dB at 2.4GHz
„ PARTIALLY MATCHED TYPE
„ HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25_°C )
CHARACTERISTICS
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Power Added Efficiency
Channel Temperature Rise
SYMBOL
P1dB
CONDITIONS
UNIT MIN. TYP. MAX.
dBm 47.0 48.0 ⎯
G1dB
IDS1
ηadd
ΔTch
VDS= 12V
dB
f = 2.4GHz
IDSset≅8.0A
A
%
(VDS X IDS + Pin – P1dB) °C
X Rth(c-c)
9.0 10.0 ⎯
⎯ 12.0 15.0
⎯ 39 ⎯
⎯ ⎯ 100
Recommended gate resistance (Rg) : Rg = 30 Ω (Max.)
ELECTRICAL CHARACTERISTICS ( Ta= 25_°C )
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
SYMBOL
CONDITIONS
gm VDS= 3V
IDS= 12.0A
VGSoff VDS= 3V
IDS= 300mA
IDSS VDS= 3V
VGS= 0V
VGSO IGS= -10.0mA
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
S ⎯ 20.0 ⎯
V -1.0 -1.8 -3.0
A ⎯ 38 ⎯
V
-5
⎯
⎯
°^C/W ⎯ 0.6 0.8
‹The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. May 2007