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| TPH4R008NH Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – MOSFETs Silicon N-channel MOS (U-MOS-H) | |||
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MOSFETs Silicon N-channel MOS (U-MOSî³-H)
TPH4R008NH
1. Applications
⢠DC-DC Converters
⢠Switching Voltage Regulators
⢠Motor Drivers
2. Features
(1) Small, thin package
(2) High-speed switching
(3) Small gate charge: QSW = 18 nC (typ.)
(4) Low drain-source on-resistance: RDS(ON) = 3.3 m⦠(typ.) (VGS = 10 V)
(5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)
(6) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)
3. Packaging and Internal Circuit
TPH4R008NH
SOP Advance
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
1
2012-07-21
Rev.1.0
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