TPD7104F Datasheet, PDF (1/13 Pages) Toshiba Semiconductor – 1 channel High-Side N channel Power MOSFET Gate Driver

TPD7104F
TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
TPD7104F
1 channel High-Side N channel Power MOSFET Gate Driver
TPD7104F is a 1channel high-side N channel power MOSFET gate driver.
This IC contains a charge pump circuit, allowing easy configuration of a
high-side switch for large-current applications.
Features
 Charge pump circuit is built in
 Over current protection circuit is built in
 Housed in the PS-8 package and supplied in embossed carrier tape
Pin Assignment (top view)
1 V_DD
2 IS
8 R_ISref
7 DIAG
3 OUT
6 IN
4 GND
5 GND
Note: 4pin and 5pin should short-circuit externally.
SON8-P-0303-0.65S
Weight: 0.017 g (typ.)
Marking
Part No.
(or abbreviation code)
7104F
Lot No.
Note: ● on the lower left of the marking indicates Pin 1
*Weekly code: (Three digits)
Week of manufacture
(01 for first week of year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
Note: That because of its MOS structure, this product is sensitive to static electricity
Start of commercial production
2014-9
1
2014-10-8