TPD7102F_13 Datasheet, PDF (1/16 Pages) Toshiba Semiconductor – 1 channel High-Side N channel Power MOSFET Gate Driver

TPD7102F
TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
TPD7102F
1 channel High-Side N channel Power MOSFET Gate Driver
TPD7102F is a 1channel high-side N channel power MOSFET gate
driver. This IC contains a charge pump circuit, allowing easy configuration
of a high-side switch for large-current applications.
Features
z Charge pump circuit is built in
z The diagnosis function of the voltage between OUT1 and SOURCE is
built in
z Housed in the PS-8 package and supplied in embossed carrier tape.
SON8-P-0303-0.65
Weight: 0.017g (typ.)
Pin Assignment (top view)
DIAG 1
ENB 2
IN 3
GND 4
(TOP VIEW）
8 V_DD
7 OUT1
6 OUT2
5 SOURCE
Marking
D7102
Part No.
(or abbreviation code)
Lot No.
・Note:● on the lower left of the marking indicates Pin 1
*Weekly code: (Three digits)
Week of manufacture
(01 for first week of year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
Please contact your TOSHIBA sales representative for details
as to environmental matters such as the RoHS compatibility of
Product.
The RoHS is the Directive 2011/65/EU of the European
Parliament and of the Council of 8 June 2011 on the restriction
of the use of certain
Note:That because of its MOS structure, this product is sensitive to static electricity.
Start of commercial production
2010-03
1
2013-11-01