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TPD1032F_13 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – 2-IN-1 Low-Side Power Switch for Motor, Solenoid and Lamp Drive
TPD1032F
Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
TPD1032F
2-IN-1 Low-Side Power Switch for Motor, Solenoid and Lamp Drive
The TPD1032F is a 2-IN-1 low-side switch.
The IC has a vertical MOSFET output which can be directly
driven from a CMOS or TTL logic circuit (e.g., an MPU). The IC
is equipped with intelligent self-protection functions.
Features
• Two built-in power IC chips with a new structure combining a
control block and a vertical power MOSFET (L2-π-MOS) on
each chip.
• Can directly drive a power load from a CMOS or TTL logic.
Weight: 0.08 g (typ.)
• Built-in protection circuits against overvoltage (active clamp),
overtemperature (thermal shutdown), and overcurrent (current limiter).
• Low Drain-Source ON-resistance: RDS (ON) = 0.4 Ω (max) (@VIN = 5 V, ID = 1 A, Tch = 25°C)
• Low Leakage Current: IDSS = 10 μA (max) (@VIN = 0 V, VDS = 20 V, Tch = 25°C)
• Low Input Current: IIN = 300 μA (max) (@VIN = 5 V, Tch = -40~110°C)
• 8-pin SOP package for surface with embossed-tape packing.
Pin Assignment (top view)
SOURCE1 1
8 DRAIN1
IN1 2
7 DRAIN1
SOURCE2 3
6 DRAIN2
IN2 4
5 DRAIN2
Due to its MOS structure, this product is sensitive to static electricity.
Marking
TPD1032
F
Note: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Part No. (or abbreviation code)
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Lot No.
Please contact your TOSHIBA sales representative for details as to
Note
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2011/65/EU of the European Parliament and
of the Council of 8 June 2011 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
Start of commercial production
1999-10
1
2013-12-26