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TPD1030F Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – 2-IN-1 Low-Side Switch for Motor, Solenoid and Lamp Drive
TPD1030F
Preliminary
Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
TPD1030F
2-IN-1 Low-Side Switch for Motor, Solenoid and Lamp Drive
TPD1030F is a 2-IN-1 low-side switch.
The IC has a vertical MOSFET output which can be directly
driven from a CMOS or TTL logic circuit (e.g., an MPU). The IC
offers intelligent self-protection function.
Features
• Built-in two power IC chips with a new structure combining a
control block and a vertical power MOSFET (L2-π-MOS) on
each chip.
Weight: 0.08 g (typ.)
• Can directly drive a power load from a CMOS or TTL logic.
• Built-in protection circuits against overvoltage (active clamp), overtemperature (thermal shutdown), and
overcurrent (current limiter).
• Low Drain-Source ON-resistance: RDS (ON) = 0.6 Ω (max) (@VIN = 5 V, ID = 0.5 A, Tch = 25°C)
• Low Leakage Current: IDSS = 10 µA (max) (@VIN = 0 V, VDS = 30 V, Tch = 25°C)
• Low Input Current: IIN = 300 µA (max) (@VIN = 5 V, Tch = 25°C)
• 8-pin SOP package with embossed-tape packing.
Pin Assignment (top view)
SOURCE1 1
8 DRAIN1
IN1 2
7 DRAIN1
SOURCE2 3
6 DRAIN2
IN2 4
5 DRAIN2
Note1: That because of its MOS structure, this product is sensitive to static electricity.
980910EBA1
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general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of
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Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook.
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• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
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• The information contained herein is subject to change without notice.
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