TPD1008SA_07 Datasheet, PDF (1/11 Pages) Toshiba Semiconductor – High-side Power Switch for Motors, Solenoids, and Lamp Drivers

TPD1008SA
TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
TPD1008SA
High-side Power Switch for Motors, Solenoids, and Lamp Drivers
The TPD1008SA is a monolithic power IC for high-side switches. The IC
has a vertical MOS FET output which can be directly driven from a CMOS
or TTL logic circuit (e.g., an MPU). The device offers intelligent
self-protection and diagnostic functions.
Features
z A monolithic power IC with a new structure combining a control block
(Bi–CMOS) and a vertical power MOS FET (π–MOS) on a single chip
z One side of load can be grounded to a high-side switch.
z Can directly drive a power load from a microprocessor.
z Built–in protection against thermal shutdown and load short circuiting
z Incorporates a diagnosis function that allows diagnosis output to be
read externally at load short-circuiting, opening, or overtemperature.
z Up to −10V of counter-electromotive force from an L load can be
applied.
z Low on-resistance
: R_DS (ON) = 200mΩ (max)
z Low operating current : I_DD = 1mA (typ.) (@V_DD = 12V, V_IN = 0V)
z 5-pin TO−220 insulated package
z Three standard lead configurations
Pin Assignment
Weight
SSIP5–P–1.70C : 2.1g (typ.)
ZIP5–P–1.70L : 2.1g (typ.)
ZIP5–P–1.70K : 2.1g (typ.)
Note: Due to its MOS structure, this product is sensitive to static electricity.
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2006-10-31