TPCT4204 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon N Channel MOS Type

TPCT4204
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSᶚ)
TPCT4204 _TENTATIVE
Lithium Ion Secondary Battery Applications
• Lead(Pb)-Free
• Small footprint due to small and thin package
• Low source-source ON resistance: RSS (ON) = (22)mΩ (typ.)
• High forward transfer admittance: |Yfs| = (25) S (typ.)
• Low leakage current: ISSS = 10 µA (max) (VSS = 30 V)
• Enhancement-model: Vth = 0.5to1.2 V(VSS = 10 V, IS = 200ЖA)
• Common drain
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Unit: mm
1
0.45
0.45
2
B
3.8±0.1
0.025 M B
4
2.0±0.1
3
0.6ʶ0.05
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Source-source voltage
V_SSS
30
V
Gate-source voltage
V_GSS
±12
V
Source current
DC
Pulse
(Note 1)
I_S
(Note 1)
I_SP
6
A
24
Power dissipation (t = 10s ) (Note 2a,3)
P_D
1.7
W
Power dissipation (t= 10s ) (Note 2b,3)
P_D
0.51
W
Single pulse avalanche energy (Note 4)
E_AS
Avalanche current
I_AR
Repetitive avalanche energy (Note 2a, 5)
E_AR
Channel temperature
T_ch
Storage temperature range
T_stg
TBD
mJ
6
A
0.17
mJ
150
°C
−55to150
°C
Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please refer
to the next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
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ĻįĬçīĬĽİĪĬçĻĶçĪĨĻĪįçĭİĹĬçĶĹçĺĴĶIJĬõç
0.14ʶ0.04
2^S
0.4ʶ0.1
0.5+0.04
-0.16
0.05 S
3
0.4+0.2
-0.1
4
1
0.85ʶ0.1 2.53ʶ0.1 0.2ʶ0.05
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1.GATE1 3. SOURCE2
2.GATE2 4. SOURCE1
JEDEC
―
JEITA
―
TOSHIBA
2-2S1A
Weight: 0.012 g (typ.)
Circuit Configuration
FET1
1
4
2
3
FET2
1
2004-11-09