TPCS8208 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

TPCS8208
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPCS8208
Lithium Ion Battery Applications
Unit: mm
• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 15 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 20 V)
• Enhancement mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA)
• Common drain
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Single-device
Drain power _{operation (Note 3a)}
dissipation
(t = 10 s)
Single-device value
(Note 2a) at dual operation
(Note 3b)
Single-device
Drain power _{operation (Note 3a)}
dissipation
(t = 10 s)
Single-device value
(Note 2b) at dual operation
(Note 3b)
Single pulse avalanche energy
(Note 4)
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_{D (1)}
P_{D (2)}
P_{D (1)}
P_{D (2)}
E_AS
I_AR
E_AR
T_ch
T_stg
20
V
20
V
±12
V
6
A
24
1.1
W
0.75
0.6
W
0.35
46.8
mJ
6
A
0.075
mJ
150
°C
−55~150
°C
Note 1, Note 2, Note 3, Note 4, Note 5: See the next page.
JEDEC
―
JEITA
―
TOSHIBA
2-3R1E
Weight: 0.035 g (typ.)
Circuit Configuration
8765
1234
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2004-07-06