TPCS8105 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)

TPCS8105
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
TPCS8105
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 9.6 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 23 S (typ.)
• Low leakage current: IDSS = −10 µA (max) (VDS = −30 V)
• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (t = 10 s)
(Note 2a)
Drain power dissipation (t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
−30
V
−30
V
±20
V
−10
A
−40
1.1
W
0.6
W
26
mJ
−10
A
0.11
mJ
150
°C
−55 to 150
°C
1,2,3 Source
4
Gate
5,6,7,8 Drain
JEDEC
―
JEITA
TOSHIBA
―
2-3R1F
Weight: 0.035 g (typ.)
Circuit Configuration
8765
Note 1, Note 2, Note 3 and Note 4: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
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2004-07-06