TPCS8102 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs

TPCS8102
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)
TPCS8102
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs
ç
Unit: mmç
Small footprint due to small and thin package
Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)
High forward transfer admittance: |Yfs| = 17 S (typ.)
Low leakage current: IDSS = −10 µA (max) (VDS = −20 V)
Enhancement-mode: Vth = −0.5~−1.2 V (VDS = −10 V, ID = −200 µA)
Maximum Ratings (Ta = 25°C)ç
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a, Note 4)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
−20
V
−20
V
±12
V
−6
A
−24
1.5
W
0.6
W
46.8
mJ
−6
A
0.15
mJ
150
°C
−55 to 150
°C
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
JEDEC
―
JEITA
―
TOSHIBA
2-3R1B
Weight: 0.035 g (typ.)
Circuit Configuration
1
2002-05-17