TPCS8009-H Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – High-Speed Switching Applications Switching Regulator Applications DC/DC Converter Applications

TPCS8009-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOSⅤ)
TPCS8009-H
High-Speed Switching Applications
Switching Regulator Applications
DC/DC Converter Applications
Unit: mm
• Low drain-source ON-resistance: R_{DS (ON)} = 0.27 Ω (typ.)
• High forward transfer admittance: |Y_fs| = 2.1 S (typ.)
• Low leakage current: I_DSS = 100 μA (max) (V_DS = 150 V)
• Enhancement model: V_th = 2.0~4.0 V (V_DS = 10 V, I_D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
1.2.3. Source
4
Gate
5.6.7.8 Drain
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (t = 10 s)
(Note 2a)
Drain power dissipation (t = 10 s)
(Note 2b)
Single-pulse avalanche energy(Note3)
Avalanche current
Repetitive avalanche energy
(Note2a, Note 4)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
150
V
150
V
±20
V
2.1
A
8.4
1.5
W
0.6
3
mJ
2.1
A
0.15
mJ
150
°C
−55~150
°C
Note: For Notes 1 to 4, refer to the next page.
JEDEC
―
JEITA
―
TOSHIBA
2-3R1F
Weight: 0.036 g (typ.)
Circuit Configuration
8765
1234
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1
2006-11-20