TPCS8006 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – High-Speed Switching Applications

TPCS8006
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
TPCS8006
High-Speed Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ.)
• High forward transfer admittance: |Yfs| = 1.6 S (typ.)
• Low leakage current: IDSS = 100 µA (max) (VDS = 250 V)
• Enhancement model: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (t = 10 s)
(Note 2a)
Drain power dissipation (t = 10 s)
(Note 2b)
Single pulse avalanche energy(Note3)
Avalanche current
Repetitive avalanche energy
(Note2a, Note 4)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
250
V
250
V
±20
V
1.1
A
4.4
1.5
W
0.6
0.07
mJ
1.1
A
0.15
mJ
150
°C
−55~150
°C
1.2.3. Gate
4
Source
5.6.7.8 Drain
JEDEC
―
JEITA
―
TOSHIBA
2-3R1F
Weight: 0.035 g (typ.)
Circuit Configuration
8765
Note 1, Note 2, Note 3 and Note 4: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
1234
1
2004-07-06