TPCP8J01 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type

TPCP8J01
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) ／Silicon NPN Epitaxial Type
TPCP8J01
Notebook PC Applications
Portable Equipment Applications
• Lead(Pb)-Free
• Small mounting area due to small and thin package
• Low drain-source ON resistance: P Channel RDS (ON) = 27 mΩ (typ.)
• High forward transfer admittance: P Channel |Yfs| = 9.6 S (typ.)
• Low leakage current: IDSS = −10 µA (VDS = −32 V)
• Enhancement-mode: P Channel Vth = −0.8 to −2.0 V
(VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
MOSFET
Characteristics
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
(t = 5 s)
(Note 2a)
Drain power dissipation
(t = 5 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy (Note 4)
BRT
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
E_AS
I_AR
E_AR
Rating
Unit
−32
V
−32
V
±20
V
−5.5
A
−22
2.14
W
1.06
W
5.8
mJ
−3
A
0.21
mJ
0.33±0.05
0.05 M A
8
5
Unit: mm
0.475
1
4
0.65
2.9±0.1
S
0.025 S
0.17±0.02
B
0.05 M B
A
0.8±0.05
0.28
+0.1
-0.11
1.12^+-00..1123
1.12^+-00..1123
1．Emitter
2．Drain
3．Drain
4．Drain
5．Source
6．Gate
7．Base
8．Collector
JEDEC
0.28
+0.1
-0.11
―
JEITA
―
TOSHIBA
2-3V1G
Weight: 0.011 g (typ.)
Circuit Configuration
8
7
6
5
R1
R2
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Collector power dissipation
(Note 1)
V_CBO
V_CEO
V_EBO
I_C
P_C
50
V
50
V
6
V
100
mA
200
mW
Common Maximum Ratings (Ta=25°C )
Characteristics
Symbol
Rating
Unit
Junction temperature
Storage temperature range
T_J
150
°C
T_stg
−55~150
°C
This transistor is an electrostatic-sensitive device. Handle with caution.
Note: For Notes 1 to 5, refer to the next page.
1
1
2
3
4
Marking (Note5)
8
7
6
5
8J01
※
1
2
3
4
Lot No.
2004-07-14