TPCP8BA1 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Silicon P Channel MOS Type (U-MOS-II) / Silicon Epitaxial Schottky Barrier Diode

TPCP8BA1
Silicon P Channel MOS Type (U-MOS-II) / Silicon Epitaxial Schottky Barrier Diode
TENTATIVE
TPCP8BA1
: mm
DC-DC Converter
• Combined Pch MOSFET and Schottky Diode into one Package.
• Low R_{DS (ON)} and Low V_F
Maximum Ratings (Ta = 25°C) MOSFET
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DS
−20
V
Gate-Source voltage
V_GSS
±12
V
Drain current
DC
I_D
−1.3
A
Pulse
I_DP (Note 2)
−2.6
Drain power dissipation
P_D (Note 1)
1.0
W
Channel temperature
T_ch
150
°C
Maximum Ratings (Ta = 25°C) SCHOTTKY DIODE
Characteristics
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Average forward current
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
V_RM
V_R
I_O
I_FSM
T_j
30
V
25
V
0.7
A
4 (50 Hz)
A
125
°C
1:Anode
2:N/C
3:Source
4:Gate
5,6:Drain
7,8:Cathode
JEDEC

JEITA

TOSHIBA TOSHIBA
Weight: mg (typ)
Maximum Ratings (Ta = 25°C) MOSFET, DIODE COMMON
Characteristics
Symbol
Rating
Unit
Storage temperature
Operating temperature
T_stg
−55~125
°C
T_opr
(Note 3)
−40~85
°C
Note 1: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm²)
Note 2: The pulse width limited by max channel temperature.
Note 3: Operating temperature limited by max channel temperature and max junction temperature.
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the
environment is protected against electrostatic discharge. Operators should wear anti-static clothing and use
containers and other objects that are made of anti-static materials.
The Channel-to-Ambient thermal resistance R_{th (ch-a)} and the drain power dissipation P_D vary according to
the board material, board area, board thickness and pad area. When using this device, please take heat
dissipation fully into account.
1
2003-12-19