TPCP8901 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process)

TPCP8901
TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process)
TPCP8901
Portable Equipment Applications
Switching Applications
0.33±0.05
0.05 M A
8
5
Unit: mm
• Small footprint due to small and thin package
• High DC current gain : PNP h_FE = 200 to 500 (I_C = −0.1 A)
:NPN h_FE = 400 to 1000 (I_C = 0.1 A)
• Low collector-emitter saturation : PNP V_{CE (sat)} = −0.20 V (max)
: NPN V_{CE (sat)} = 0.17 V (max)
• High-speed switching : PNP t_f = 70 ns (typ.)
: NPN t_f = 85 ns (typ.)
0.475
1
4
0.65
2.9±0.1
S
0.025 S
0.17±0.02
B
0.05 M B
A
0.8±0.05
0.28
+0.1
-0.11
Absolute Maximum Ratings (Ta = 25°C)
1.12^+-00..1132
Characteristics
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC (Note 1)
Pulse (Note 1 )
Base current
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
Rating
Unit
PNP NPN
−50 100
V
−50 50
V
−7
7
V
−0.8 1.0
A
−5.0 5.0
−100 100
mA
1.12^+-00..1132
1.Emitter1
2.Base1
3.Emitter2
4.Base2
5.Collector2
6.Collector2
7.Collector1
8.Collector1
0.28
+0.1
-0.11
JEDEC
―
JEITA
―
TOSHIBA
2-3V1C
Weight: 0.017 g (typ.)
Single-device
operation
1.48
Collector power
dissipation (t = 10s) Single-device
P_C (Note 2)
W
value at dual
0.80
operation
Single-device
operation
0.83
Collector power
dissipation (DC)
Single-device
P_C (Note 2)
W
value at dual
0.48
operation
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
Note 1: Please use devices on condition that the junction temperature is below 150℃.
Icp=±5A (@ t≦100μs)
Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm²)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2006-11-13