TPCP8701 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Epitaxial Type

TOSHIBA Transistor Silicon NPN Epitaxial Type
TPCP8701
TPCP8701
Portable Equipment Applications
Switching Applications
Inverter Lighting Applications
0.33±0.05
0.05 M A
8
5
Unit: mm
• Small footprint due to small and thin package
• High DC current gain : hFE = 400 to 1000 (IC = 0.3 A)
• Low collector-emitter saturation : VCE (sat) = 0.14 V (max)
• High-speed switching : tf = 120 ns (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
100
V
Collector-emitter voltage
V_CEX
80
V
V_CEO
50
V
Emitter-base voltage
V_EBO
7
V
DC (Note 1)
I_C
Collector current
Pulse (Note 1 )
I_CP
3.0
A
5.0
Base current
I_B
300
mA
Single-device
operation
1.77
Collector power
dissipation (t = 10s)
Single-device
Pc (Note 2)
W
value at dual
0.95
operation
Single-device
operation
0.94
Collector power
dissipation (DC)
Single-device ^{Pc (Note 2)}
W
value at dual
0.54
operation
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
0.475 1
4
0.65
2.9±0.1
S
0.025 S
0.17±0.02
B
0.05 M B
A
0.8±0.05
0.28
+0.1
-0.11
1.12^+-00..1123
1.12^+-00..1123
1.Emitter1
2.Base1
3.Emitter2
4.Base2
JEDEC
5.Collector2
6.Collector2
7.Collector1
8.Collector1
0.28
+0.1
-0.11
―
JEITA
―
TOSHIBA
2-3V1C
Weight: 0.017 g (typ.)
Figure 1.
Circuit configuration
(Top View)
8　　7 　6 　5
1　 2　 3　 4
Note 1: Please use devices on condition that the junction temperature is
below 150°C.
Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm²)
Note 3: ● on lower left on the marking indicates Pin 1.
※ Weekly code: (Three digits)
Figure 2. Marking
(Note 3)
8　 7 6 　 5
8701 ^Type
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)
1
※
1　 2　 3 4
Lot No.
(Weekly code)
2004-05-11