TPCP8603 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High-Speed Switching Applications DC/DC Converters Strobe Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type
TPCP8603
TPCP8603
High-Speed Switching Applications
DC/DC Converters
Strobe Applications
0.33±0.05
0.05 M A
8
5
Unit: mm
• High DC current gain: h_FE = 120～300 (IC = −0.1 A)
• Low collector-emitter saturation voltage: V_{CE (sat)} = −0.2 V (max)
• High-speed switching: t_f = 120 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
0.475 1
4
0.65
2.9±0.1
S
0.025 S
0.17±0.02
B
0.05 M B
A
0.8±0.05
0.28
+0.1
-0.11
Collector-vase voltage
Collector-emitter voltage
V_CBO
−120
V
V_CEO
−120
V
Collector-emitter voltage
V_EBO
−7
V
Collector current
DC (Note 1)
I_C
Pulsed (Note 1)
I_CP
−1.0
A
−2.0
A
Base current
I_B
0.1
A
Collector power
dissipation
t = 10 s
DC
3.00
P_C (Note 2)
1.25
W
W
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55~150
°C
1.12^+-00..1123
1.12^+-00..1123
1. Collector
2. Collector
3. Collector
4. Base
0.28
+0.1
-0.11
5. Emitter
6. Collector
7. Collector
8. Collector
JEDEC
⎯
JEITA
⎯
Note 1: Ensure that the channel temperature does not exceed 150°C
during use of the device.
Note 2: Mounted on the FR4 board (glass-epoxy; 1.6 mm thick; Cu
area, 645 mm²)
TOSHIBA
2-3V1A
Weight: 0.017 g (typ.)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2006-11-13