TPCP8601 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon PNP Epitaxial Type (PCT Process)

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
TPCP8601
TPCP8601
High-Speed Switching Applications
DC-DC Converter Applications
Strobo Flash Applications
0.33±0.05
0.05 M A
8
5
Unit: mm
• High DC current gain: h_FE = 200 to 500 (I_C = −0.6 A)
• Low collector-emitter saturation: V_{CE (sat)} = −0.19 V (max)
• High-speed switching: t_f = 35 ns (typ.)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
0.475 1
4
0.65
2.9±0.1
S
0.025 S
0.17±0.02
B
0.05 M B
A
0.8±0.05
0.28 ^+-00..111
Collector-base voltage
V_CBO
−20
V
Collector-emitter voltage
V_CEO
−20
V
Emitter-base voltage
V_EBO
−7
V
DC (Note 1)
I_C
Collector current
Pulse (Note 1 )
I_CP
−4.0
A
−7.0
Base current
I_B
−0.5
A
1.12^+-00..1123
1.12^+-00..1123
1.Collector
2.Collector
3.Collector
4.Base
JEDEC
5.Emitter
6.Collector
7.Collector
8.Collector
0.28
+0.1
-0.11
―
Collector power
dissipation (t = 10s)
t = 10s
DC
Pc (Note 2)
3.3
1.3
W
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
JEITA
―
TOSHIBA
2-3V1A
Weight: 0.017 g (typ.)
Figure 1.
Note 1: Ensure that the junction temperature does not exceed 150°C during
use of this device.
Note 2: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm²)
Note 3: ● on the lower left of the marking indicates Pin 1.
Circuit Configuration
(Top View)
8　 7 　6 　 5
* Weekly code (three digits):
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(lowest-order digit of the calendar year)
1　 2　 3　 4
Figure 2. Marking
(Note 3)
876 5
8601
Type
*
1234
Lot No.
(weekly code)
1
2004-12-10