TPCP8510 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Transistor Silicon NPN Epitaxial Type

TOSHIBA Transistor Silicon NPN Epitaxial Type
TPCP8510
TPCP8510
High-Speed, High-Voltage Switching Applications
DC-DC Converter Applications
0.33±0.05
0.05 M A
8
5
Unit: mm
• High DC current gain: h_FE = 120 to 300 (I_C = 0.1 A)
• Low collector-emitter saturation: V_{CE (sat)} = 0.14 V (max)
• High-speed switching: t_f = 0.2 μs (typ)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
V_CBO
180
V
V_CEX
150
V
V_CEO
120
V
Emitter-base voltage
V_EBO
7
V
DC (Note 1)
I_C
Collector current
Pulse (Note 1)
I_CP
1.0
A
2.0
Base current
I_B
0.1
A
Collector power
dissipation
t = 10s
DC
2.25
P_C (Note 2)
1.1
W
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
0.475
1
4
0.65
2.9±0.1
S
0.025 S
0.17±0.02
B
0.05 M B
A
0.8±0.05
0.28
+0.1
-0.11
1.12^+-00..1132
1.12^+-00..1132
0.28
+0.1
-0.11
1.Emitter
2.Emitter
3.Emitter
4.Base
5.Collector
6.Collector
7.Collector
8.Collector
JEDEC
―
JEITA
―
TOSHIBA
2-3V1Q
Weight: 0.017 g (typ.)
Note 1: Please use devices on condition that the junction temperature
is below 150°C.
Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm²)
Note 3:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Figure 1. Circuit configuration (top view)
8　7　6　5
1　2　3　4
1
Figure 2. Marking
8　7　6　5
8510
●
※
Type
Lot No.
Pin #1
1　2　3　4
2009-07-14