TPCP8504 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Epitaxial Type

TOSHIBA Transistor Silicon NPN Epitaxial Type
TPCP8504
TPCP8504
High Speed Switching Applications
DC-DC Converter Applications
0.33±0.05
0.05 M A
8
5
Unit: mm
• High DC current gain : h_FE = 400 to 1000 (I_C = 0.2 A)
• Low collector-emitter saturation : V_{CE (sat)} = 0.12 V (max)
• High-speed switching : t_f = 25 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC (Note 1)
Pulse (Note 1 )
Base current
Collector power
dissipation (Note 2)
t = 10s
DC
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
Rating
Unit
20
V
10
V
7
V
2.0
A
3.5
0.2
A
2.8
W
1.2
150
°C
−55 to 150
°C
0.475
1
4
0.65
2.9±0.1
S
0.025 S
0.17±0.02
B
0.05 M B
A
0.8±0.05
0.28
+0.1
-0.11
1.12^+-00..1132
1.12^+-00..1132
1.Collector
2.Collector
3.Collector
4.Base
5.Emitter
6.Collector
7.Collector
8.Collector
0.28
+0.1
-0.11
JEDEC
―
JEITA
―
TOSHIBA
2-3V1A
Weight: 0.017 g (typ.)
Note 1: Please use devices on condition that the junction temperature is below 150°C.
Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm²)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2006-11-13