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TPCP8405 Datasheet, PDF (1/14 Pages) Toshiba Semiconductor – Cell Phones Motor Drivers
MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H)
TPCP8405
1. Applications
• Cell Phones
• Motor Drivers
2. Features
(1) Low drain-source on-resistance
P-channel RDS(ON) = 24 mΩ (typ.) (VGS = -10 V),
N-channel RDS(ON) = 20 mΩ (typ.) (VGS = 10 V)
(2) Low leakage current
P-channel IDSS = -10 µA (VDS = -30 V),
N-channel IDSS = 10 µA (VDS = 30 V)
(3) Enhancement mode
P-channel Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA),
N-channel Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)
3. Packaging and Internal Circuit
TPCP8405
PS-8
1: Source 1
2: Gate 1
3: Source 2
4: Gate 2
5, 6: Drain 2
7, 8: Drain 1
1
2011-03-14
Rev.2.0