TPCP8402 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)

TPCP8402
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
TPCP8402
Portable Equipment Applications
Mortor Drive Applications
DC-DC Converter Applications
Unit: mmç
• Low drain-source ON resistance
: P Channel RDS (ON) = 60 mΩ (typ.)
N Channel RDS (ON) = 38 mΩ (typ.)
• High forward transfer admittance
: P Channel |Yfs| = 6.0 S (typ.)
N Channel |Yfs| = 7.0 S (typ.)
• Low leakage current
: P Channel IDSS = −10 µA (VDS = −30 V)
N Channel IDSS = 10 µA (VDS = 30 V)
• Enhancement−mode
: P Channel Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1mA)
N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
DC
Drain current
Pulse
(Note 1)
(Note 1)
Drain power
dissipation
(t = 5 s)
(Note 2a)
Single-device operation
(Note 3a)
Single-device value at
dual operation(Note 3b)
Drain power
dissipation
(t = 5 s)
(Note 2b)
Single-device operation
(Note 3a)
Single-device value at
dual operation(Note 3b)
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_{D (1)}
P_{D (2)}
P_{D (1)}
P_{D (2)}
−30
−30
±20
−3.4
−13.6
1.48
1.23
0.58
0.36
30
V
30
V
±20
V
4.2
A
16.8
1.48
1.23
W
0.58
0.36
Single pulse avalanche energy(Note 4) E_AS
0.75
2.86
mJ
Avalanche current
I_AR
−1.7
2.1
A
Repetitive avalanche energy
Single-device value at dual operation
E_AR
0.12
mJ
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
T_ch
150
°C
T_stg
−55~150
°C
Ê¢Note 7Ê£
1ɽSource1
2ɽGate1
3ɽSource2
4ɽGate2
5ɽDrain2
6ɽDrain2
7ɽDrain1
8ɽDrain1
JEDEC
―
JEITA
―
TOSHIBA
―
Weight: 0.017 g (typ.)
Circuit Configuration
8
7
6
5
1
2
3
4
Marking (Note 6)
8
7
6
5
Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6), please
refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
8402
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2
3
4
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2003-09-26