TPCP8401_07 Datasheet, PDF (1/10 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS Ⅲ / π-MOS Ⅵ)

TPCP8401
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS Ⅲ / π-MOS Ⅵ)
TPCP8401
○ Switching Regulator Applications
○ Load Switch Applications
• Lead(Pb)-Free
• Multi-chip discrete device; built-in P channel MOS FET for main
switch and N Channel MOS FET for drive
• Small footprint due to small and thin package
• Low drain-source ON resistance
: P Channel R_{DS (ON)} = 31 mΩ (typ.)
• Low drain-source ON resistance
High forward transfer admittance
: P Channel |Y_fs| = 13 S (typ.)
• Low leakage current
: P Channel I_DSS = −10 μA (V_DS = −12 V)
• Enhancement−mode
: P Channel V_th = −0.5 to −1.2 V (V_DS = −10 V, I_D = −200 μA)
Absolute Maximum Ratings (Ta = 25°C)
P-ch
Characteristics
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
(t = 5 s)
(Note 2a)
Drain power dissipation
(t = 5 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
E_AS
I_AR
E_AR
T_ch
Rating
Unit
−12
V
−12
V
±8
V
−5.5
A
−22.0
1.96
W
1.0
W
5.3
mJ
−2.8
A
0.22
mJ
150
°C
0.33±0.05
0.05 M A
8
5
Unit: mm
0.475
1
4
0.65
2.9±0.1
S
0.025 S
0.17±0.02
B
0.05 M B
A
0.8±0.05
0.28
+0.1
-0.11
1.12^+-00..1132
1.12^+-00..1132
1．Source(Nch） 5．Gate(Pch)
0.28
+0.1
-0.11
2．Drain(Pch) 6．Source(Pch)
3．Drain(Pch) 7．Gate(Nch)
4．Drain(Pch) 8．Drain(Nch)
JEDEC
―
JEITA
―
TOSHIBA
2-3V1G
Weight: 0.017 g (typ.)
Circuit Configuration
8
7
6
5
1
2
3
4
Marking (Note5)
876
5
8401
※
123
4
Lot No.
1
2006-11-13