TPCP8401 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Motor Dreive Notebook PC Portable Machines and Tools

TPCP8401
Motor Dreive
Notebook PC
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type
(P Channel U-MOSᶚ / N Channel U-MOSᶙ)
TPCP8401
2.9ʶ0.1
Preliminary
0.3 +0.1ʗʵ0.05
8
0.025 M
Unit:
m^Am⁵ç
6
4
Portable Machines and Tools
• Low drain-source ON resistance: P Channel RDS (ON) = 31 mΩ (typ.)
N Channel RDS (ON) = 20 mΩ (typ.)
• High forward transfer admittance: P Channel |Yfs| = ç S (typ.)
1
4
N Channel |Yfs| = ç S (typ.)
A
• Low leakage current:
P Channel IDSS = −10 µA (VDS = −30 V)
N Channel IDSS = 10 µA (VDS = 30 V)
• Enhancement-mode
: P Channel Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)
0.65
1 _{0.95 0.95 3}
2.9ʶ0.2
: N Channel Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)ç
Characteristics
Rating
Symbol _{P Channel N Channel} Unit
Drain-source voltage
V_DSS
−30
30
V
Drain-gate voltage (R_GS = 20 kΩ)
V_DGR
−30
30
V
Gate-source voltage
V_GSS
±20
±20
V
DC
Drain current
Pulse
(Note 1) I_D
−3.5
4.5
A
(Note 1) I_DP
−14
18
Drain power
dissipation
Single-device operation
(Note 3a)
(t = 10s)
(Note 2a)
Single-device value at
dual operation (Note 3b)
P_D(1)
P_D(2)
TBD
TBD
TBD
TBD
Dd(Dd(ttiirsrs₌₌aassii1i1ninpp00aappssttoo)i)ioowwnneerr
(Note 2a)
Single-device operation
(Note 3a)
Single-device value at
dual operation (Note 3b)
(Note 2b)
P_D(1)
P_D(2)
TBD
TBD
TBD
W
TBD
Single pulse avalanche energy
E_AS
2.0
3.3
(Note 4a) (Note 4b)
mJ
Avalanche current
I_AR
−1.75
2.25
A
Repetitive avalanche energy
mJ
Single-device value at operation
E_AR
(Note 2a, 3b, 5)
TBD
Channel temperature
Storage temperature range
T_ch
150
°C
T_stg
−55~150
°C
JEDEC^0.475
―
0.8ʶ0.05
JEITA
―
T_SOSHIBA 0.05ç S 2-6J1E
Weigh¹²t^É¿É¿: 0^SG.0^OA8^UT0_ERg_1C(_çt^Eyp¹.^ç)
5É¿DRAIN2
6É¿DRAIN2
3ɿSOURCE2ç 7ɿDRAIN1
4ɿGATE2ç ç 8ɿDRAIN1ç
Circuit Configuration
̟̙̘̚̚
ʕ
̟̞̩̖̚
ʕ
ĊİĹĪļİĻç ĊĶĵĭİĮļĹĨĻİĶĵç
TOSHIBA ₈ ç ʕ ₇
6
5
8
7
6
5
Note: (Note 1), (Note 2ab), (Note 3ab), (Note 4), (Note 5) Please see next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2
N-ch
3
4
P-ch
1
2002-09-09