TPCP8302 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ)

TPCP8302
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ)
TPCP8302
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
• Lead (Pb)-free
• Small footprint due to small and thin package
• Low drain-source ON-resistance: R_DS(ON) = 25 mΩ (typ.)
• High forward transfer admittance: |Y_fs| = 14 S (typ.)
• Low leakage current: I_DSS = −10 μA (max) (V_DS = −20 V)
• Enhancement model: V_th = −0.4 to −1.0V (V_DS = −6 V, I_D = −1 mA)
0.33±0.05
0.05 M A
8
5
Unit: mm
0.475
1
4
0.65
2.9±0.1
B
0.05 M B
A
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Single-device operation
Drain power
(Note 3a)
dissipation
(t = 5 s) (Note 2a) ^{Single-device value at}
dual operation (Note 3b)
Single-device operation
Drain power
(Note 3a)
dissipation
(t = 5 s) (Note 2b) ^{Single-device value at}
dual operation (Note 3b)
Single-pulse avalanche energy (Note 4)
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_{D (1)}
P_{D (2)}
P_{D (1)}
P_{D (2)}
E_AS
I_AR
E_AR
T_ch
T_stg
Rating
Unit
−20
V
−20
V
±12
V
−5
A
−20
1.48
1.23
W
0.58
0.36
6.5
mJ
-5
A
0.12
mJ
150
°C
−55 to 150 °C
S
0.025 S
0.17±0.02
0.8±0.05
0.28
+0.1
-0.11
1. Source1
2. Gate1
3. Source2
4. Gate2
1.12^+-00..1132
1.12^+-00..1132
5.
Drain2
0.28
+0.1
-0.11
6. Drain2
7. Drain1
8. Drain1
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-3V1G
Weight: 0.017 g (typ.)
Note: For Notes 1 to 6, see the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Circuit Configuration
8
7
6
5
Marking (Note 6)
876
5
1
2
3
4
1
8302
※
123
4
Lot No.
2006-11-17