TPCP8202_1 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Portable Equipment Applications Motor Drive Applications DC_DC Converters

TPCP8202
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIV)
TPCP8202
Portable Equipment Applications
Motor Drive Applications
DC-DC Converters
• Lead(Pb)-Free
• Low drain-source ON-resistance: R_DS(ON) = 19 mΩ (typ.)
• High forward transfer admittance: |Y_fs| = 20 S (typ.)
• Low leakage current: I_DSS = 10 μA (max)(V_DS = 30 V)
• Enhancement model: V_th = 0.7 to 1.4V
(V_DS = 10 V, I_D = 200 μA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Single-device operation
Drain power
(Note 3a)
dissipation
(t = 5 s) (Note 2a) Single-device value at
dual operation (Note 3b)
Single-device operation
Drain power
(Note 3a)
dissipation
(t = 5 s) (Note 2b) Single-device value at
dual operation (Note 3b)
Single-pulse avalanche energy (Note 4)
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_{D (1)}
P_{D (2)}
P_{D (1)}
P_{D (2)}
E_AS
I_AR
E_AR
T_ch
T_stg
30
V
30
V
±12
V
5.5
A
22
1.48
1.23
W
0.58
0.36
7.86
mJ
5.5
A
0.12
mJ
150
°C
−55 to 150 °C
Note: For Notes 1 to 6, see the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
0.33±0.05
0.05 M A
8
5
Unit: mm
0.475
1
4
0.65
2.9±0.1
S
0.025 S
0.17±0.02
B
0.05 M B
A
0.8±0.05
0.28
+0.1
-0.11
1.12^+-00..1132
1.12^+-00..1132
1. Source1
2. Gate1
3. Source2
4. Gate2
JEDEC
5. Drain2
6. Dain2
7. Drain1
8. Drain1
JEITA
0.28 ^+-00..111
⎯
⎯
TOSHIBA
2-3V1G
Weight: 0.017 g (typ.)
Circuit Configuration
8
7
6
5
1
2
3
4
Marking (Note 6)
876
5
8202
※
123
4
Lot No.
1
2008-03-21