TPCP8201_07 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

TPCP8201
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
TPCP8201
Portable Equipment Applications
Motor Drive Applications
DC-DC Converter Applications
• Lead(Pb)-Free
• Low drain-source ON resistance: R_{DS (ON)} = 38 mΩ (typ.)
• High forward transfer admittance:|Y_fs| = 7.0 S (typ.)
• Low leakage current: I_DSS = 10 μA (V_DS = 30 V)
• Enhancement mode: V_th = 1.3 to 2.5 V (V_DS = 10 V, I_D = 1mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
DC
Drain current
Pulse
(Note 1)
(Note 1)
Drain power
dissipation
(t = 5 s)
(Note 2a)
Single-device operation
(Note 3a)
Single-device value at
dual operation
(Note 3b)
Drain power
dissipation
(t = 5 s)
(Note 2b)
Single-device operation
(Note 3a)
Single-device value at
dual operation
(Note 3b)
Single pulse avalanche energy
(Note 4)
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_{D (1)}
P_{D (2)}
P_{D (1)}
P_{D (2)}
E_AS
I_AR
E_AR
T_ch
T_stg
Rating
Unit
30
V
30
V
±20
V
4.2
A
16.8
1.48
1.23
W
0.58
0.36
2.86
mJ
2.1
A
0.12
mJ
150
°C
−55~150
°C
0.33±0.05
0.05 M A
8
5
Unit: mm
0.475 1
4
0.65
2.9±0.1
S
0.025 S
0.17±0.02
B
0.05 M B
A
0.8±0.05
0.28
+0.1
-0.11
1.12
+0.13
-0.12
1.12
+0.13
-0.12
1．Source1 5．Drain2
2．Gate1 6．Drain2
3．Source2 7．Drain1
4．Gate2 8．Drain1
JEDEC
0.28
+0.1
-0.11
―
JEITA
―
TOSHIBA
2-3V1G
Weight: 0.017 g (typ.)
Circuit Configuration
8
7
6
5
1
2
3
4
Note: For Notes 1 to 6, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with caution.
Marking (Note 6)
876
5
8201
＊
123
4
Lot No.
1
2007-01-16