TPCP8201 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Portable Equipment Applications

TPCP8201
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
TPCP8201
Portable Equipment Applications
Motor Drive Applications
DC-DC Converter Applications
• Lead(Pb)-Free
• Low drain-source ON resistance
: RDS (ON) = 38 mΩ (typ.)
• High forward transfer admittance
:|Yfs| = 7.0 S (typ.)
• Low leakage current
: IDSS = 10 µA (VDS = 30 V)
• Enhancement mode
: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
DC
Drain current
Pulse
(Note 1)
(Note 1)
Drain power
dissipation
(t = 5 s)
(Note 2a)
Single-device operation
(Note 3a)
Single-device value at
dual operation
(Note 3b)
Drain power
dissipation
(t = 5 s)
(Note 2b)
Single-device operation
(Note 3a)
Single-device value at
dual operation
(Note 3b)
Single pulse avalanche energy
(Note 4)
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_{D (1)}
P_{D (2)}
P_{D (1)}
P_{D (2)}
E_AS
I_AR
E_AR
T_ch
T_stg
30
V
30
V
±20
V
4.2
A
16.8
1.48
1.23
W
0.58
0.36
2.86
mJ
2.1
A
0.12
mJ
150
°C
−55~150
°C
0.33±0.05
0.05 M A
8
5
Unit: mm
0.475 1
4
0.65
2.9±0.1
S
0.025 S
0.17±0.02
B
0.05 M B
A
0.8±0.05
0.28
+0.1
-0.11
1.12^+-00..1123
1.12^+-00..1123
1．Source1
2．Gate1
3．Source2
4．Gate2
5．Drain2
6．Drain2
7．Drain1
8．Drain1
JEDEC
0.28
+0.1
-0.11
―
JEITA
―
TOSHIBA
2-3V1G
Weight: 0.017 g (typ.)
Circuit Configuration
8
7
6
5
1
2
3
4
Marking (Note 6)
8
7
6
5
Note: For Notes 1 to 6, refer to the next page.
This transistor is an electrostatic-sensitive device. Handle with caution.
8201
＊
1
2
3
4
Lot No.
1
2004-07-06