TPCP8101 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III)

TPCP8101
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III)
TPCP8101
Notebook PC Applications
Portable Equipment Applications
• Small footprint due to small and thin package
• Low drain-source ON-resistance: R_{DS (ON)} = 24 mΩ (typ.)
• High forward transfer admittance: |Y_fs| = 14 S (typ.)
• Low leakage current: I_DSS = -10 μA (max) (V_DS = -20 V)
• Enhancement model: V_th = -0.5 to -1.2 V
(V_DS = -10 V, I_D = -200 μA)
Absolute Maximum Ratings (Ta = 25°C)
0.33±0.05
0.05 M A
8
5
Unit: mm
0.475 1
4
0.65
2.9±0.1
S
0.025 S
0.17±0.02
B
0.05 M B
A
0.8±0.05
0.28
+0.1
-0.11
Characteristic
Symbol
Rating
Unit
1.12^+-00..1123
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
(t = 5 s)
(Note 2a)
Drain power dissipation
(t = 5 s)
(Note 2b)
Single-pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy (Note 4)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
-20
V
-20
V
±8
V
-5.6
A
-22.4
1.68
W
0.84
W
20.3
mJ
-5.6
A
0.168
mJ
150
°C
-55~150
°C
1.12^+-00..1123
1. Source
2. Source
3. Source
4. Gate
0.28
+0.1
-0.11
5. Drain
6. Drain
7. Drain
8. Drain
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-3V1K
Weight: 0.017 g (typ.)
Note: For Notes 1 to 5, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Circuit Configuration
8
7
6
5
Marking (Note 5)
8
76
5
1
2
3
4
1
8101
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1
2
34
Lot No.
2006-11-17