TPCP8009 Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – Motor Drivers Mobile Equipment

Power MOSFETs Silicon N-channel MOS (U-MOS)
TPCP8009
1. Applications
• Motor Drivers
• Mobile Equipment
2. Features
(1) Small, thin package
(2) Small gate charge : Q_SW = 9.6 nC (typ.)
(3) Low drain-source on-resistance: R_DS(ON) = 9.5 mΩ (typ.) (V_GS = 10 V)
(4) Low leakage current: I_DSS = 10 µA (max) (V_DS = 40 V)
(5) Enhancement mode: V_th = 2 to 3 V (V_DS = 10 V, I_D = 1 mA)
3. Packaging and Internal Circuit
TPCP8009
1,2, 3: Source
4: Gate
5, 6, 7, 8: Drain
PS-8
4. Absolute Maximum Ratings (Note) (T_a = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DSS
40
V
Gate-source voltage
V_GSS
±20
Drain current (DC)
(Note 1)
I_D
10
A
Drain current (pulsed)
(Note 1)
I_DP
40
Power dissipation
(t = 5 s)
(Note 2)
P_D
2.01
W
Power dissipation
(t = 5 s)
(Note 3)
P_D
1.01
W
Single-pulse avalanche energy
(Note 4)
E_AS
112
mJ
Avalanche current
I_AR
10
A
Channel temperature
(Note 5)
T_ch
175

Storage temperature
T_stg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2012-07-13
Rev.5.0