TPCP8002 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV)

TPCP8002
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV)
TPCP8002
Notebook PC Applications
Portable Equipment Applications
• Lead (Pb)-Free
• Small footprint due to small and thin package
• Low drain-source ON-resistance
: R_{DS (ON)} = 7 mΩ (typ.)
• High forward transfer admittance
:|Y_fs| = 36 S (typ.)
• Low leakage current
: I_DSS = 10 μA (V_DS = 20 V)
• Enhancement mode
: V_th = 0.5 to 1.2 V (V_DS = 10 V, I_D = 0.2 mA)
0.33±0.05
0.05 M A
8
5
Unit: mm
0.475 1
4
0.65
2.9±0.1
S
0.025 S
0.17±0.02
B
0.05 M B
A
0.8±0.05
0.28
+0.1
-0.11
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
DC
Drain current
Pulse
(Note 1)
(Note 1)
Drain power dissipation (t = 5 s)
(Note 2a)
Drain power dissipation (t = 5 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 4)
Channel temperature
Storage temperature range
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
Rating
Unit
20
V
20
V
±12
V
9.1
A
36.4
1.68
W
0.84
21.5
mJ
9.1
A
0.168
mJ
150
°C
−55~150
°C
1.12^+-00..1132
1.12^+-00..1132
1．Source
2．Source
3．Source
4．Gate
5．Drain
6．Drain
7．Drain
8．Drain
0.28 ^+-00..111
JEDEC
―
JEITA
―
TOSHIBA
2-3V1K
Circuit Configuration
8765
Note: For Notes 1 to 5, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1234
Marking (Note 5)
8765
8002
*
1234
Lot No.
1
2007-01-16