TPCP8001-H Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)

TPCP8001-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)
TPCP8001-H
High Efficiency DC／DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
0.33±0.05
0.05 M A
8
5
Unit: mm
• Small footprint due to a small and thin package
• High speed switching
• Small gate charge: Q_SW = 3.6 nC (typ.)
• Low drain-source ON-resistance: R_{DS (ON)} = 13 mΩ (typ.)
• High forward transfer admittance: |Y_fs| = 16 S (typ.)
• Low leakage current: I_DSS = 10 μA (max) (V_DS = 30V)
• Enhancement mode: V_th = 1.1 to 2.3 V (V_DS = 10 V, I_D = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation
(t = 5 s)
(Note 2a)
Drain power dissipation
(t = 5 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
30
V
30
V
±20
V
7.2
A
28.8
1.68
W
0.84
W
33.6
mJ
7.2
A
0.066
mJ
150
°C
−55 to 150
°C
Note: For Notes 1 to 5, refer to the next page.
This transistor is an electrostatic-sensitive device. Handle with care.
0.475 1
4
0.65
2.9±0.1
S
0.025 S
0.17±0.02
B
0.05 M B
A
0.8±0.05
0.28
+0.1
-0.11
1.12^+-00..1132
1.12^+-00..1132
1．Source
2．Source
3．Source
4．Gate
5．Drain
6．Drain
7．Drain
8．Drain
0.28
+0.1
-0.11
JEDEC
―
JEITA
―
TOSHIBA
2-3V1K
Weight: 0.017 g (typ.)
Circuit Configuration
8765
1234
Marking (Note 5)
8765
8001H
※
1234
Lot No.
1
2006-05-29