TPCM8102 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ)

TPCM8102
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ)
TPCM8102
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
• Small footprint due to a small and thin package
• Low drain-source ON-resistance: R_{DS (ON)} = 6.0 mΩ (typ.)
• High forward transfer admittance: |Y_fs| = 44S (typ.)
• Low leakage current: I_DSS = −10 μA (max) (V_DS = −30 V)
• Enhancement mode: V_th = −0.8 to −2.0 V (V_DS = −10 V, I_D = −1 mA)
Unit: mm
0.8
8
0.25±0.05
0.05 M A
5
0.2^{＋－00.2}
1
4
3.5±0.2
0.55
A
Absolute Maximum Ratings (Ta = 25°C)
0.05 S
S
1
4
Characteristic
Symbol
Rating
Unit
2.75±0.2
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc = 25°C) (Note 4)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
−30
V
−30
V
±20
V
−25
A
−75
30
W
2.3
W
1.0
W
81
mJ
−25
A
1.8
mJ
150
°C
−55 to 150
°C
Note: For Notes 1 to 4, refer to the next page.
8
1,2,3：SOURCE
5,6,7,8：DRAIN
0.8±0.1
5
4：GATE
JEDEC
―
JEITA
―
TOSHIBA
2-4L1A
Weight: 0.028 g (typ.)
Circuit Configuration
8765
1234
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1
2008-03-21