TPCM8001-H Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – High Speed and High Efficiency DC-DC Converters, Notebook PC Applications, Portable Equipment Applications

TENTATIVE
TPCM8001-H
+ TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)
TPCM8001-H
High Speed and High Efficiency DC-DC Converters
Notebook PC Applications
Portable Equipment Applications
0.8
8
Unit: mm
0.25
5
• Small footprint due to small and thin package
• High speed switching
• Small gate charge: Qg =19 nC (typ.)
• Low drain-source ON resistance: RDS (ON) = 7 mO (typ.)
• High forward transfer admittance: |Yfs| =36 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ )
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation (Tc=25 )
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc=25 ) (Note 4)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
30
V
30
V
±20
V
20
A
60
TBD
W
TBD
W
TBD
W
TBD
mJ
TBD
A
TBD
mJ
150
°C
−55 to 150
°C
Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next
page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
1
4
3.9MAX
3.5
0.55
1
4
2.7
8
5
1,2,3 SOURCE
5,6,7,8 DRAIN
4 GATE
JEDEC
?
JEITA
?
TOSHIBA
Weight: g (typ.)
Circuit Configuration
87 65
12 34
1
2004-08-18