TPCL4203 Datasheet, PDF (1/12 Pages) Toshiba Semiconductor – Dedicated to Single-Cell Lithium-Ion Secondary Battery Applications

MOSFETs Silicon N-Channel MOS (U-MOS)
TPCL4203
1. Applications
• Dedicated to Single-Cell Lithium-Ion Secondary Battery Applications
Note: The product(s) described herein should not be used for any other application.
2. Features
(1) Small, thin package
(2) Low source-source on-resistance: R_SS(ON) = 27 mΩ (typ.) (V_GS = 4.5 V)
(3) Low leakage current: I_SSS = 10 µA (max) (V_SS = 24 V)
(4) Enhancement mode: V_th = 0.5 to 1.2 V (V_SS = 10 V, I_S = 200 µA)
(5) Common drain
3. Packaging and Internal Circuit
TPCL4203
1: Source 1
2: Gate 1
3: Gate 2
4: Source 2
ChipLGA
4. Absolute Maximum Ratings (Note) (T_a = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Source-source voltage
V_SSS
24
V
Gate-source voltage
V_GSS
±12
Source current (DC)
(Note 1)
I_S
6
A
Source current (pulsed)
(Note 1)
I_SP
24
Power dissipation
(t = 10 s)
(Note 2), (Note 4)
P_D
0.50
W
Power dissipation
(t = 10 s)
(Note 3), (Note 4)
P_D
1.65
W
Channel temperature
T_ch
150

Storage temperature
T_stg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2011-02-01
Rev.3.0