TPCF8B01_07 Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode

TPCF8B01
TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode
TPCF8B01
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Low drain-source ON resistance: R_{DS (ON)} = 72 mΩ (typ.)
• High forward transfer admittance: |Y_fs| = 4.7 S (typ.)
• Low leakage current: I_DSS =-10 μA (max) (V_DS = -20 V)
• Enhancement-model: V_th = -0.5 to-1.2 V(V_DS =-10 V, I_D = -200 μA)
• Low forward voltage: V_FM(2) = 0.46V(typ.)
Absolute Maximum Ratings
MOSFET (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Single pulse avalanche energy (Note 4)
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
V_DSS
V_DGR
V_GSS
I_D
I_DP
E_AS
I_AR
E_AR
-20
V
-20
V
±8
V
-2.7
A
-10.8
1.2
mJ
-1.35
A
0.11
mJ
SBD (Ta = 25°C)
Characteristics
Repetitive peak reverse voltage
Average forward current (Note 2a, 6)
Peak one cycle surge forward current
(non-repetitive)
Symbol
V_RRM
I_F(AV)
I_FSM
Rating
Unit
20
V
1.0
A
7(50Hz)
A
JEDEC
―
JEITA
―
TOSHIBA
2-3U1C
Weight: 0.011 g (typ.)
Circuit Configuration
87 6 5
Absolute Maximum Ratings for MOSFET and SBD (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Single-device operation
Drain power
dissipation
(Note 3a)
(t = 5 s) (Note 2a) Single-device value at
dual operation (Note 3b)
Single-device operation
Drain power
(Note 3a)
dissipation
(t = 5 s) (Note 2b) Single-device value at
dual operation (Note 3b)
Channel temperature
Storage temperature range
P_{D (1)}
P_{D (2)}
P_{D (1)}
P_{D (2)}
T_ch
T_stg
1.35
1.12
W
0.53
0.33
150
°C
-55~150
°C
12 34
Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5), (Note 6) and (Note 7), please refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1
2006-11-16