TPCF8B01 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode

TPCF8B01
TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode
TPCF8B01
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 72 mÙ (typ.)
• High forward transfer admittance: |Yfs| = 4.7 S (typ.)
• Low leakage current: IDSS = −10 ìA (max) (VDS = −20 V)
• Enhancement-model: Vth = −0.5 to −1.2 V(VDS =−10 V, ID = −200 ìA)
• Low forward voltage: VFM = 0.46V(typ.)
Maximum Ratings
MOSFET (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Single pulse avalanche energy (Note 4)
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_DP
E_AS
I_AR
E_AR
SBD (Ta = 25°C)
Characteristics
Repetitive peak reverse voltage
Average forward current (Note 2a, 6)
Peak one cycle surge forward current
(non-repetitive)
Symbol
V_RRM
I_F(AV)
I_FSM
Rating
Unit
−20
V
−20
V
±8
V
−2.7
A
−10.8
1.2
mJ
−1.35
A
0.11
mJ
Rating
Unit
20
V
1.0
A
7(50Hz)
A
1. Anode
2. Anode
3.Source
4. Gate
5. Drain
6. Drain
7. Cathode
8. Cathode
JEDEC
JEITA
TOSHIBA
Weight: 0.011 g (typ.)
Circuit Configuration
8
7
6
5
Maximum Ratings for MOSFET and SBD (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Single-device operation
Drain power
(Note 3a)
dissipation
(t = 5 s) (Note 2a) Single-device value at
dual operation (Note 3b)
Single-device operation
Drain power
(Note 3a)
dissipation
(t = 5 s) (Note 2b) Single-device value at
dual operation (Note 3b)
Channel temperature
Storage temperature range
P_{D (1)}
P_{D (2)}
P_{D (1)}
P_{D (2)}
T_ch
T_stg
1.35
1.12
0.53
W
0.33
150
°C
−55~150
°C
1
2
3
4
Marking (Note 7)
8
5
F8A
1
4
Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5), (Note 6) and (Note 7), please refer to the next page.
1
2003-04-08