TPCF8402_09 Datasheet, PDF (1/11 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)

TPCF8402
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
TPCF8402
Portable Equipment Applications
Motor Drive Applications
DC-DC Converter Applications
Unit: mm
• Low drain-source ON resistance : P Channel R_{DS (ON)} = 60 mΩ (typ.)
N Channel R_{DS (ON)} = 38 mΩ (typ.)
• High forward transfer admittance : P Channel |Y_fs| = 5.9 S (typ.)
N Channel |Y_fs| = 6.8 S (typ.)
• Low leakage current : P Channel I_DSS = −10 μA (V_DS = −30 V)
N Channel I_DSS = 10 μA (V_DS = 30 V)
• Enhancement-mode
: P Channel V_th = −0.8 to −2.0 V (V_DS = −10 V, I_D = −1mA)
N Channel V_th = 1.3 to 2.5 V (V_DS = 10 V, I_D = 1mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DSS
Drain-gate voltage (R_GS = 20 kΩ)
V_DGR
Gate-source voltage
V_GSS
DC
Drain current
Pulse
(Note 1) I_D
(Note 1) I_DP
Drain power ^{Single-device operation}
dissipation
(Note 3a)
(t = 5 s)
(Note 2a)
Single-device value at
dual operation(Note 3b)
P_{D (1)}
P_{D (2)}
Drain power ^{Single-device operation}
dissipation
(Note 3a)
(t = 5 s)
(Note 2b)
Single-device value at
dual operation(Note 3b)
P_{D (1)}
P_{D (2)}
-30
-30
±20
-3.2
-12.8
1.35
1.12
0.53
0.33
30
V
30
V
±20
V
4.0
A
16.0
1.35
1.12
W
0.53
0.33
Single pulse avalanche energy (Note 4) E_AS
0.67
2.6
mJ
Avalanche current
I_AR
-1.6
2.0
A
Repetitive avalanche energy
Single-device value at dual operation
E_AR
0.11
mJ
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
T_ch
150
°C
T_stg
−55~150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-3U1B
Weight: 0.011 g (typ.)
Circuit Configuration
8
7
6
5
1
2
3
4
Note: For Notes 1 to 5, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with caution.
1
2009-09-29